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| SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 - FEBRUARY 1999 PARTMARKING DETAILS ZUMT817-25 ZUMT817-40 T7 T23 ZUMT817-25 ZUMT817-40 COMPLEMENTARY TYPES ZUMT817-25 ZUMT817-40 - ZUMT807-25 ZUMT807-40- T7 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB IBM Ptot Tj:Tstg VALUE 50 45 5 1 500 100 200 330 -55 to +150 UNIT V V V A mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio -25 -40 Transition Frequency Collector-base Capacitance fT Cobo SYMBOL ICBO IEBO VCE(sat) VBE(on) hFE 100 40 160 250 200 5.0 MIN. TYP. MAX. UNIT CONDITIONS. 700 1.2 600 400 600 mV V pF *Measured under pulsed conditions. Pulse width=300s. Duty cycle 10 0.1 5 A A A VCB=20V, IE=0 VCB=20V, IE=0, Tamb=150C VEB=5V, IC=0 IC=500mA, IB=50mA* IC=500mA, VCE=1V* IC=100mA, VCE=1V* IC=500mA, VCE=1V* IC=100mA, VCE=1V* IC=100mA, VCE=1V* MHz IC=10mA, VCE=5V f=35MHz IE=Ie=0, VCB=10V f=1MHz 2% |
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